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Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors

2006; Institute of Physics; Volume: 153; Issue: 2 Linguagem: Inglês

10.1149/1.2146861

1945-7111

Nguyễn Duy Cường, Dong-Jin Kim, Byoung-Don Kang, Chang Soo Kim, Kwang Min Yu, Soon‐Gil Yoon,

Diamond and Carbon-based Materials Research

Tantalum nitride thin films were deposited on substrates at various nitrogen/argon ratios by dc magnetron sputtering. The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as or TaN in the films were observed as nitrogen/argon ratio increases from 3 to 25%. The phase changes were associated with a change in the resistivity and TCR (temperature coefficient of resistance) of the films. TCR values of the films deposited at room temperature and different nitrogen contents were negative, and strongly decreased with the increase in nitrogen/argon ratio. The films deposited at a nitrogen/argon ratio of 3% show higher TCR values and thermal stability of the resistance in the temperature range. The films deposited at a nitrogen/argon ratio of 3% and a temperature of showed a TCR value of , which is close to near-zero TCR in the range of deposition temperature.