Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs
2005; American Institute of Physics; Volume: 87; Issue: 18 Linguagem: Inglês
10.1063/1.2120904
ISSN1520-8842
AutoresH. C. Lin, P. D. Ye, G. D. Wilk,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoAtomic-layer deposition (ALD) provides a unique opportunity to integrate high-quality gate dielectrics on III-V compound semiconductors. We report detailed leakage current and breakdown electric-field characteristics of ultrathin Al2O3 dielectrics on GaAs grown by ALD. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of state-of-the-art SiO2 on Si, not counting the high-k dielectric properties for Al2O3. A Fowler-Nordheim tunneling analysis on the GaAs∕Al2O3 barrier height is also presented. The breakdown electric field of Al2O3 is measured as high as 10MV∕cm as a bulk property. A significant enhancement on breakdown electric field up to 30MV∕cm is observed as the film thickness approaches to 1nm.
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