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Defect-Free Planarization of 4H–SiC(0001) Substrate Using Reference Plate

2008; Institute of Physics; Volume: 47; Issue: 1R Linguagem: Inglês

10.1143/jjap.47.104

1347-4065

Keita Yagi, Junji Murata, Akihisa Kubota, Yasuhisa Sano, Hideyuki Hara, Kenta Arima, Takeshi Okamoto, Hidekazu Mimura, Kazuto Yamauchi,

Advanced Surface Polishing Techniques

In this paper, a new defect-free planarization technique for 4H–SiC(0001) substrate is described. This technique uses hydroxyl radicals (OH radicals) that are generated on an Fe metal surface in a hydrogen peroxide (H2O2) solution. First, the oxidation of a 4H–SiC substrate by OH radicals is investigated by X-ray photoelectron spectroscopy (XPS) analysis. Next, the planarization of the 4H–SiC substrate is conducted. A very flat and smooth surface without any scratches and etch pits is obtained. The planarized surface has a step-terrace structure.