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Microscopic model of the Staebler-Wronski effect in intrinsic amorphous hydrogenated silicon

1985; Taylor & Francis; Volume: 51; Issue: 3 Linguagem: Inglês

10.1080/13642818508240570

1463-6417

L. E. Mosley, M. A. Paesler, Isamu Shimizu,

Semiconductor materials and devices

Abstract A model, based on experimental evidence and thermodynamic arguments, is presented to explain the Staebler-Wronski effect. The breaking of a weak Si-Si bond and the subsequent forming of a Si-H-Si bridge and dangling bonds are proposed as the metastable states produced in the Staebler-Wronski effect. A possible explanation for the appearance of the 0·8 eV luminescence peak after illumination is offered in terms of this model. Finally, it is suggested that the use of fluorine and hydrogen together might reduce the Staebler-Wronski effect.