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Artigo Revisado por pares
BIBTEX RIS

Sol–gel-derived Er-activated SiO2–HfO2 planar waveguides for 1.5μm application

2004; Elsevier BV; Volume: 345-346; Linguagem: Inglês

10.1016/j.jnoncrysol.2004.08.088

ISSN

1873-4812

Autores

L. Zampedri, Giancarlo C. Righini, Hervé Portalès, S. Pelli, Gualtiero Nunzi Conti, M. Montagna, M. Mattarelli, Rogéria Rocha Gonçalves, Maurizio Ferrari, Alessandro Chiasera, Mohamed Bouazaoui, Cristina Armellini,

Tópico(s)

Photonic and Optical Devices

Resumo

(100 − x)SiO2–xHfO2 (x = 10, 20, 30, 40 mol) planar waveguides, doped with 0.3 mol% Er3+ ions were prepared by the sol–gel route, using dip-coating deposition on v-SiO2 substrates. The waveguides were characterized by m-line, Raman and photoluminescence spectroscopies. The results are discussed with the aim of assessing the role of hafnia on the structural, optical and spectroscopic properties of the erbium-doped silica-hafnia planar waveguides. The spectral bandwidth of the 4I13/2 → 4I15/2 transition does not change practically with the hafnium content. The 4I13/2 level decay curves present a single-exponential profile, with a lifetime between 5.5 and 7.1 ms, depending on the HfO2 concentration.

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