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Use of trilevel resists for high-resolution soft-x-ray projection lithography

1990; American Institute of Physics; Volume: 56; Issue: 22 Linguagem: Inglês

10.1063/1.102961

1520-8842

Dwight W. Berreman, J. E. Bjorkholm, Marco Becker, L. Eichner, R. R. Freeman, T. E. Jewell, W Mansfield, Alastair A. MacDowell, M. L. O’Malley, E. L. Raab, W. T. Silfvast, L. H. Szeto, D. M. Tennant, W. K. Waskiewicz, D. L. White, David L. Windt, O. R. Wood,

Medical Imaging Techniques and Applications

A projection optical system with 20:1 reduction has been used with radiation at ∼36 nm to evaluate resists for use in soft-x-ray projection lithography. The high absorption of soft x rays by carbon-based polymers requires that an imaging resist layer be very thin. The sensitivities and contrasts of several such resists are reported. By incorporating a thin imaging layer into a trilayer resist scheme, we have exposed, developed, and transferred features as small as 0.2 μm into silicon.