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Comparative Studies of CdZnS Thin Films at Low Zinc Content Prepared by Vacuum Evaporation and CBD

2011; Trans Tech Publications; Volume: 225-226; Linguagem: Inglês

10.4028/www.scientific.net/amr.225-226.784

1662-8985

Cai Juan Tian, Rong Tang, Song Hu, Wei Li, Liang Feng, Jing Quan Zhang, Lili Wu,

Semiconductor materials and interfaces

Cd 1−x Zn x S thin films at low Zn content were prepared both by chemical bath deposition (CBD) and vacuum co-evaporation. The X-ray fluorescence (XRF) and X-ray photoelectron spectroscopy (XPS) analysis were performed to determine the composition of the films, while the structural properties were investigated by X-ray diffraction (XRD). As a probable window layer, the optical band gaps of Cd 1−x Zn x S thin films prepared by the dry and wet process were calculated. Finally, the surface morphologies of the thin films were survey by scanning electron microscopy (SEM) and atomic force microscopy (AFM).