Valence State‐Dependent Ferromagnetism in Mn‐Doped NiO Thin Films
2011; Volume: 24; Issue: 3 Linguagem: Inglês
10.1002/adma.201103436
ISSN1521-4095
AutoresWensheng Yan, Zhihu Sun, Zhongrui Li, Qinghua Liu, Tao Yao, Zhiyun Pan, Chao Wang, Fengchun Hu, Yong Jiang, Zeming Qi, Fei Zeng, Shiqiang Wei,
Tópico(s)Multiferroics and related materials
ResumoAdvanced MaterialsVolume 24, Issue 3 p. 353-357 Communication Valence State-Dependent Ferromagnetism in Mn-Doped NiO Thin Films Correction(s) for this article Correction: Valence State-Dependent Ferromagnetism in Mn-Doped NiO Thin Films Wensheng Yan, Zhihu Sun, Zhongrui Li, Qinghua Liu, Tao Yao, Zhiyun Pan, Chao Wang, Fengchun Hu, Yong Jiang, Zeming Qi, Fei Zeng, Shiqiang Wei, Volume 24Issue 3Advanced Materials pages: 329-329 First Published online: January 10, 2012 Wensheng Yan, Corresponding Author Wensheng Yan [email protected] National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, China.Search for more papers by this authorZhihu Sun, Zhihu Sun National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorZhongrui Li, Zhongrui Li National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorQinghua Liu, Qinghua Liu National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorTao Yao, Tao Yao National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorZhiyun Pan, Zhiyun Pan National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorChao Wang, Chao Wang National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorFengchun Hu, Fengchun Hu National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorYong Jiang, Yong Jiang National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorZeming Qi, Zeming Qi National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorFei Zeng, Fei Zeng Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaSearch for more papers by this authorShiqiang Wei, Corresponding Author Shiqiang Wei [email protected] National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, China.Search for more papers by this author Wensheng Yan, Corresponding Author Wensheng Yan [email protected] National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, China.Search for more papers by this authorZhihu Sun, Zhihu Sun National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorZhongrui Li, Zhongrui Li National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorQinghua Liu, Qinghua Liu National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorTao Yao, Tao Yao National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorZhiyun Pan, Zhiyun Pan National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorChao Wang, Chao Wang National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorFengchun Hu, Fengchun Hu National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorYong Jiang, Yong Jiang National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorZeming Qi, Zeming Qi National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaSearch for more papers by this authorFei Zeng, Fei Zeng Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaSearch for more papers by this authorShiqiang Wei, Corresponding Author Shiqiang Wei [email protected] National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, ChinaNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, China.Search for more papers by this author First published: 22 November 2011 https://doi.org/10.1002/adma.201103436Citations: 37Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract Manipulating the ferromagnetism of diluted magnetic semiconductors by tuning the valence state of doped ions is found to be achievable in Mn-doped NiO. First-principles calculations predict that the interactions between substitutional Mn3+ ions in NiO are ferromagnetic, while the Mn2+–Mn2+ interactions are antiferromagnetic. This scenario is experimentally supported by a great enhancement of saturation magnetization with increased Mn3+/Mn2+ ratio in Mn-doped and (Mn, Li)-codoped NiO. Supporting Information Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. 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