Mechanical properties of the GaN thin films deposited on sapphire substrate
1998; Elsevier BV; Volume: 189-190; Linguagem: Inglês
10.1016/s0022-0248(98)00262-0
ISSN1873-5002
AutoresGuolin Yu, Hiroyasu Ishikawa, Takashi Egawa, Tetsuo Soga, Junji Watanabe, T. Jimbo, M. Umeno,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoThe surface deformation of undoped GaN epitaxial layer on sapphire(0 0 0 1) substrate has been studied by the nanoindentation of pointed diamond (Berkovich triangular pyramid) and spherically tipped diamond of 5 μm radius. We found a "pop-in" under the load portion of load–displacement curves for all the samples, and that average shear stress is dependent on the film thickness. We further calculated "true-hardness" of GaN on sapphire(0 0 0 1) substrate, and compared with the results of InGaN on sapphire.
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