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Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)

2008; Wiley; Volume: 2; Issue: 4 Linguagem: Inglês

10.1002/pssr.200802081

1862-6270

Henrik Pedersen, Stefano Leone, Anne Henry, Vanya Darakchieva, Patrick Carlsson, Andreas Gällström, Erik Janzén,

Semiconductor materials and interfaces

Abstract 200 µm thick 4H‐SiC epilayers have been grown by chloride‐based chemical‐vapor deposition using methyltrichlorosilane (MTS) as single precursor. The very high crystalline quality of the grown epilayer is demonstrated by high resolution X‐Ray Diffraction rocking curve with a full‐width‐half‐maximum value of only 9 arcsec. The high quality of the epilayer is further shown by low temperature photoluminescence showing strong free exciton and nitrogen bound exciton lines. The very high crystalline quality achieved for the thick epilayer grown in just two hours at 1600 °C suggests that MTS is a suitable precursor molecule for SiC bulk growth. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)