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Luminescence properties of rare-earth ions in SiO2 glasses prepared by the sol–gel method

2004; Elsevier BV; Volume: 345-346; Linguagem: Inglês

10.1016/j.jnoncrysol.2004.08.040

1873-4812

A. Vedda, N. Chiodini, Daniela Di Martino, Mauro Fasoli, M. Martini, Federico Moretti, E. Rosetta, G. Spinolo, M. Nikl, N. Solovieva, A. Baraldi, R. Capelletti,

Photorefractive and Nonlinear Optics

Radio-luminescence (RL) and wavelength resolved thermally stimulated luminescence (TSL) measurements have been performed on sol-gel SiO 2 glasses, undoped (with high OH- or low OH-content) and rare-earth (Ce, Gd and Tb) doped in the temperature range 10-310K. Moreover, a comparison has been performed between undoped sol-gel and commercial glasses. In undoped samples RL spectra are characterized by emissions at 1.9eV, 2.4eV (only in high OH-content glasses) and 2.7eV at 10 K; their nature is discussed and related to different intrinsic defects. Strong emission quenching is observed by temperature increasing. Besides similar intrinsic bands, the doped glasses RL emission spectra display typical emissions related to 5d-4f (Ce 3+ ), 6 P- 8 S (Gd 3+ ) and 5 D 3 - 7 F j , 5 D 4 - 7 F j (Tb 3+ ) transitions respectively, whose amplitudes increase by increasing the temperature above 150K. TSL measurements show the existence of glow peaks at 100 K and 220 K. The observed increase of RL rare-earth emission amplitudes above 150 K can be explained by considering (i) the progressive decrease of competitive host matrix recombination channels and (ii) the free carriers trapping at defect sites during irradiation (monitored by TSL), whose stability strongly depends upon temperature.