Voltar
Artigo Revisado por pares
BIBTEX RIS

Second-Harmonic Generation in GaAs: Experiment versus Theoretical Predictions of χ x y z ( 2 )

2003; American Physical Society; Volume: 90; Issue: 3 Linguagem: Inglês

10.1103/physrevlett.90.036801

ISSN

1092-0145

Autores

Stefan Bergfeld, W. Daum,

Tópico(s)

Spectroscopy and Laser Applications

Resumo

For GaAs we have determined |chi((2))(xyz)(-2omega;omega,omega)| in second-harmonic generation experiments using two-photon energies between 2 and 5 eV. In addition to the E1, E1+delta(1), E'0, and E2 critical-point bulk transitions of GaAs, a surprisingly strong surface transition at 3.35 eV was observed for natively oxidized GaAs(001) samples. A detailed comparison with theoretical predictions reveals that calculations that include many-particle effects at the level of the "scissors" approximation can describe the overall frequency dependence of the second-harmonic susceptibility reasonably well.

Referência(s)