Preparation and Dielectric Properties of the Multilayer Capacitor with (Ba, Sr)TiO 3 Thin Layers by Metalorganic Chemical Vapor Deposition
1997; Institute of Physics; Volume: 36; Issue: 9S Linguagem: Inglês
10.1143/jjap.36.5870
ISSN1347-4065
AutoresYutaka Takeshima, Kosuke Shiratsuyu, Hiroshi Takagi, Yukio Sakabe,
Tópico(s)Semiconductor materials and devices
ResumoBarium strontium titanate ( (Ba, Sr)TiO 3 ; BST) thin films were prepared on Pt-coated magnesium oxide single-crystal substrates (Pt(111)/MgO(100) and Pt(100)/MgO(100)) at 650° C by metalorganic chemical vapor deposition (MOCVD). The BST films with a perovskite single phase were obtained. Their room-temperature dielectric constant was 400–590 measured at 100 mV and 1 kHz. The leakage current density was below the order of 10 -7 A/cm 2 at 3 V, and the breakdown field was above 500 kV/cm. In addition, the multilayer capacitor with five layers of BST was prepared. The room-temperature capacitance with an effective electrode area of 0.16 mm 2 was 20 nF at 100 mV and 1 kHz. The leakage current was on the order of 10 -8 A at 1V, and on order of 10 -5 A at 3 V.
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