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High‐mobility oxide TFT for circuit integration of AMOLEDs

2011; Wiley; Volume: 19; Issue: 12 Linguagem: Inglês

10.1889/jsid19.12.867

1938-3657

Eri Fukumoto, Toshiaki Arai, Narihiro Morosawa, Kazuhiko Tokunaga, Yasuhiro Terai, Takashige Fujimori, Tatsuya Sasaoka,

Transition Metal Oxide Nanomaterials

Abstract— A high‐mobility and high‐reliability oxide thin‐film transistor (TFT) that uses In‐Sn‐Zn‐O (ITZO) as a channel material has been developed. The mobility was 30.9 cm 2 /V‐sec and the threshold voltage shift after 20,000 sec of a bias‐temperature‐stress (BTS) test (with a stress condition of Vg = 15 V, Vd = 15 V, and T = 50°C) was smaller than 0.1 V. In addition, a method of obtaining a stable enhancement‐type TFT, which realizes circuit integration for active‐matrix organic light‐emitting diode (AMOLED) displays has been developed.