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High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio

2004; American Institute of Physics; Volume: 22; Issue: 4 Linguagem: Inglês

10.1116/1.1767106

1520-8567

Maria V. Kotlyar, Liam O’Faoláin, Rab Wilson, Thomas F. Krauss,

Photonic and Optical Devices

We investigate etching conditions for photonic crystals (PhCs) in InGaAsP/InP and AlGaAs/GaAs using a new regime of CAIBE operation. We show that the beam voltage-current ratio is critical in obtaining high material/mask selectivity. For one-dimensional PhCs, i.e., air slots, selectivities of 22:1 and 50:1 were achieved in InP and GaAs, respectively, using a very high beam voltage (about 1500 V) and a low beam current (about 10 mA). Etched features were observed to be very smooth, i.e., edge roughness was low. Two-dimensional PhCs were etched in InGaAsP/InP under similar conditions achieving selectivities up to 27:1 and 34:1 for hole diameters of 170 and 270 nm, respectively.