Electron Drift Mobility in KCl
1969; Wiley; Volume: 31; Issue: 1 Linguagem: Inglês
10.1002/pssb.19690310150
ISSN1521-3951
Autores Tópico(s)Semiconductor materials and devices
ResumoAbstract From electron transit time measurements the electron drift mobility in KCl has been deduced for the temperature range 200 to 500 °K. By comparison with low temperature Hall mobility data it is concluded that above 300 °K the measured values coincide with the microscopic mobility μ of conduction band electrons which may be described by μ = μ 0 [exp (θ/ T ) − 1]. Below 300 °K the measured drift mobility is controlled by the interaction of the conduction band electrons with shallow traps. These traps also influence the electron lifetime. Since the electron mobilities in AgCl and TlCl deduced from the literature may also be represented by the expression given above that this expression is generally valid for ionic crystals with intermediate electron‐phonon coupling.
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