Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy
1995; American Institute of Physics; Volume: 77; Issue: 7 Linguagem: Inglês
10.1063/1.358626
ISSN1520-8850
AutoresL. S. Sidhu, S. Źükotyński, Roman V. Kruzelecky, Dylan Thompson,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoHydrogen incorporation into Si-doped InP grown by gas-source molecular beam epitaxy was studied. P-H sites were identified by infrared spectroscopy. Proton-implanted reference samples were used to quantify the infrared results. Approximately 0.1 at. % hydrogen was found to be incorporated into InP:Si. Hall measurements indicated that most of the Si atoms were electrically active as donors. Rapid thermal annealing at 600 °C removed most of the bonded hydrogen from the samples. However, this resulted in relatively little change in either the room-temperature free-carrier concentration or Hall mobility.
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