InP PN Junction Waveguide Made by Mg-Ion Implantation
1986; Institute of Physics; Volume: 25; Issue: 12R Linguagem: Inglês
10.1143/jjap.25.1902
ISSN1347-4065
AutoresKinya Ōigawa, Shin‐ichiro Uekusa, Yoshinobu Sugiyama, Munecazu Tacano,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoFabrication processes to make an excellent p + n -junction on bulk n -InP by 24 Mg-ion implantation are described. The leakage-current density through a junction was less than 10 -7 A/cm 2 with a rectification ratio larger than 10 6 at a bias voltage of - 1 V and a junction breakdown voltage below - 60 V without any guardring structure. A 2.0-mm long junction waveguide was used to control the long-wavelength (λ=1.135 µm) light with an extinction of 8.6 dB at 10 V.
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