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On a heterostructure field-effect transistor (HFET) based hydrogen sensing system

2011; Elsevier BV; Volume: 36; Issue: 24 Linguagem: Inglês

10.1016/j.ijhydene.2011.09.031

1879-3487

Chi-Shiang Hsu, Kun‐Wei Lin, Huey-Ing Chen, Tai-You Chen, Chien–Cheng Huang, Po-Cheng Chou, Rong-Chau Liu, Wen-Chau Liu,

Fuel Cells and Related Materials

An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H2/air, the studied sensor still exhibits high sensitivity at room temperature. Furthermore, a simple sensing system is also designed and reported. In contrast to conventional hydrogen measurement, the detecting system consists of a hydrogen sensor and some sensing circuits. This proposed hydrogen detection system is based on the micro-controller with advantages of low cost, fast response, portable, and easy operation. From experimental results, the proposed system is shown to be good for use.