280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations
2005; Institution of Engineering and Technology; Volume: 41; Issue: 18 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresAkio Wakejima, K. Matsunaga, Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, K. Kasahara, Hiroyuki Miyamoto,
Tópico(s)Radio Frequency Integrated Circuit Design
ResumoA single-ended amplifier using a single-die GaN-FET was successfully developed for W-CDMA cellular base-station systems. The developed amplifier delivers a peak saturated output power of 280 W with a linear gain of 12.6 dB at a drain voltage of 48 V under 2.15 GHz 3GPP W-CDMA signal input. It is believed that the 280 W output power is the record output power in sigle-ended amplifiers at 2 GHz band. A high drain efficiency of 29% is also obtained at 8 dB power back off from the saturated output power.
Referência(s)