AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
2011; Institute of Physics; Volume: 4; Issue: 9 Linguagem: Inglês
10.1143/apex.4.092102
ISSN1882-0786
AutoresMyung‐Hee Y. Kim, Takehiko Fujita, Shinya Fukahori, Tetsuhiko Inazu, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, Isamu Akasaki,
Tópico(s)Photocathodes and Microchannel Plates
ResumoDeep ultraviolet (DUV) light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs) have been clearly demonstrated. AlN templates grown on PSSs had average threading dislocation densities (TDDs) of as low as 5×107 cm-2. Flip-chip DUV LEDs fabricated on PSSs demonstrated a significantly high performance. The 266 nm LED exhibited an output power of 5.3 mW and an external quantum efficiency (EQE) of 1.9% at 60 mA DC, and the 278 nm LED had 8.4 mW output and an EQE of 3.4%. Moreover, the 70% lifetime was more than 700 h at 20 mA.
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