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Low Threshold Lasing of GaN-Based VCSELs With Sub-Nanometer Roughness Polishing

2013; Institute of Electrical and Electronics Engineers; Volume: 25; Issue: 20 Linguagem: Inglês

10.1109/lpt.2013.2280965

1941-0174

Wenjie Liu, Shaoqiang Chen, Xiaolong Hu, Zhe Liu, Jiangyong Zhang, Leiying Ying, Xueqin Lv, Hidefumi Akiyama, Zhiping Caï, Baoping Zhang,

Semiconductor Lasers and Optical Devices

Low threshold lasing at room temperature was achieved in optically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) with sub-nanometer roughness polishing. The cavity region sandwiched by two dielectric distributed Bragg reflectors, incorporating InGaN/GaN multiquantum wells, a p-type AlGaN layer, and n- and p-type GaN layers, is a typical structure for electrically driven VCSELs. We observed lasing at a wavelength of 431.0 nm with a low threshold pumping energy density of ~ 3.2 mJ/cm 2 and a high spontaneous emission coupling factor of ~ 0.09. These results were attributed to the significant reduction of the internal cavity loss by the removal of the high-dislocation GaN region, the reduction of cavity length, and the achievement of sub-nanometer level surface roughness (root mean square roughness of 0.3 nm) via inductively coupled plasma etching and chemical mechanical polishing. The loss mechanism is discussed and loss is quantitatively calculated in this letter.