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Hybrid functional IrO2-TiO2 thin film resistor prepared by atomic layer deposition for thermal inkjet printheads

2011; Elsevier BV; Volume: 21; Linguagem: Inglês

10.1016/s1003-6326(11)61067-4

2210-3384

Won-Sub Kwack, Hyoung‐Seok Moon, Seong‐Jun Jeong, Qimin Wang, Se‐Hun Kwon,

Thin-Film Transistor Technologies

IrO2-TiO2 thin films were prepared by atomic layer deposition using Ir(EtCp)(COD) and titanium isopropoxide (TTIP). The resistivity of IrO2-TiO2 thin films can be easily controlled from 1 500 to 356.7 μωcm by the IrO2 intermixing ratio from 0.55 to 0.78 in the IrO2-TiO2 thin films. The low temperature coefficient of resistance(TCR) values can be obtained by adopting IrO2-TiO2 composite thin films. Moreover, the change in the resistivity of IrO2-TiO2 thin films was below 10% even after O2 annealing process at 600 °C. The step stress test results show that IrO2-TiO2 films have better characteristics than conventional TaN0.8 heater resistor. Therefore, IrO2-TiO2 composite thin films can be used as a heater resistor material in thermal inkjet printhead.