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Thermal Oxidation of Silicon: Growth Mechanism and Interface Properties

1967; Wiley; Volume: 19; Issue: 1 Linguagem: Inglês

10.1002/pssb.19670190122

1521-3951

A. G. Revesz,

Integrated Circuits and Semiconductor Failure Analysis

Abstract The thermal oxidation of silicon is controlled by impurities, most likely Na and/or OH (as originating from H 2 O or H 2 ). The latter is the main participant under very clean conditions. In situ cleaning, oxidation, and annealing of silicon results in a SiSiO 2 interface that is essentially free of surface states and shows no interface instability effects. Some of the impurities responsible for the oxide growth also contribute to ion migration through the oxide under bias at elevated temperature. The extent of this ion migration is generally very small for specimens processed by this in situ technique.