Growth mechanism of star-shaped TiN crystals
1994; Elsevier BV; Volume: 142; Issue: 1-2 Linguagem: Inglês
10.1016/0022-0248(94)90277-1
ISSN1873-5002
AutoresHsyi‐En Cheng, Min‐Hsiung Hon,
Tópico(s)GaN-based semiconductor devices and materials
ResumoStar-shaped TiN crystals obtained by chemical vapor deposition with TiCl4, N2 and H2 as gas source at ambient pressure have been examined by electron microscopy. The structure was found to be similar to the fivefold multiply-twinned particle at the core and the inherent 7.5° mismatch is shared by the five tetrahedra. The five extrusion arms of the star-shaped TiN crystals are the result of preferred growth at the five (111) twin boundaries, and the growth rate of these crystals is higher than that of the crystals of other shape. A possible mechanism has been proposed to explain the growth which avoids the internal strain and results in quick growth of these star-shaped crystals.
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