Electrical properties of lightly doped p-type silicon–germanium single crystals
1998; American Institute of Physics; Volume: 83; Issue: 10 Linguagem: Inglês
10.1063/1.367348
ISSN1520-8850
AutoresP. Gaworzewski, K. Tittelbach‐Helmrich, U. Penner, N. V. Abrosimov,
Tópico(s)Silicon and Solar Cell Technologies
ResumoExperimental results are presented on the electrical properties of lightly boron doped bulk Si1−xGex as a function of the Ge content x in the range 0<x<0.13. Calculations of the hole mobility in Si and in Si1−xGex and comparison with experimental results allow us to estimate the averaged scattering potential of the randomly distributed Ge atoms to be 0.55 eV. From Hall effect and capacitance–voltage measurements, a Hall factor around 0.8 at T=300 K is derived. Hall effect measurements in the temperature range 20–300 K enable us to determine the boron acceptor activation energy, which decreases from 45 meV at x=0 down to 32 meV for x=0.13, and to estimate the hole effective masses to be meff/m0≈0.45.
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