Effect of plating current density and annealing on impurities in electroplated Cu film
2005; American Institute of Physics; Volume: 23; Issue: 4 Linguagem: Inglês
10.1116/1.1931679
ISSN1520-8559
AutoresChi-Wen Liu, Ying-Lang Wang, Ming-Shih Tsai, Hsien‐Ping Feng, Shih-Chieh Chang, Gwo‐Jen Hwang,
Tópico(s)Semiconductor materials and devices
ResumoViews Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Chi-Wen Liu, Ying-Lang Wang, Ming-Shih Tsai, Hsien-Ping Feng, Shih-Chieh Chang, Gwo-Jen Hwang; Effect of plating current density and annealing on impurities in electroplated Cu film. J. Vac. Sci. Technol. A 1 July 2005; 23 (4): 658–662. https://doi.org/10.1116/1.1931679 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science & Technology A Search Advanced Search |Citation Search
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