Portal de Periódicos da CAPES

Interfacial stress in strained-ultrathin-layer (InAs ) 2 /(GaAs ) 1 superlattice

1992; American Physical Society; Volume: 46; Issue: 3 Linguagem: Inglês

10.1103/physrevb.46.1463

1095-3795

Shūichi Emura, R. K. Soni, Shun‐ichi Gonda,

Advanced Semiconductor Detectors and Materials

We study the effect of interfacial strain on the optical phonons in the strained-ultrathin-layer (InAs${)}_{2}$/(GaAs${)}_{1}$ superlattice by use of Raman scattering. A large softening of the vibrational frequencies, arising from a combined effect of phonon confinement and tensile stress in the GaAs layer, is observed. By comparing with an ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$As alloy of equivalent composition, in which the composition dependence of the mode frequency is considered as being due to a local strain that is phenomenologically related to the bond-length and bond-angle deviations, we make estimates of the strain (${\mathit{e}}_{\mathit{x}\mathit{x}}$=${\mathit{e}}_{\mathit{y}\mathit{y}}$=0.021) and stress (7\ifmmode\times\else\texttimes\fi{}${10}^{10}$ dyn/${\mathrm{cm}}^{2}$) in the GaAs layers.