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Artigo Revisado por pares
BIBTEX RIS

Reaction of trimethylgallium with tin, silicon, germanium and arsenic films

1974; Elsevier BV; Volume: 71; Issue: 2 Linguagem: Inglês

10.1016/s0022-328x(00)93126-7

ISSN

1872-8561

Autores

D. J. Schlyer, M. A. Ring,

Tópico(s)

Semiconductor materials and interfaces

Resumo

The transfer of methyl groups from (CH3)3Ga to tin, silicon and germanium films has been observed at 190, 230 and 285°C forming (CH3)4Sn, (CH3)6Si2, (CH3)3SiH and (CH3)4Ge, respectively.

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