High-temperature thermoelectric properties of Cu 1– x InTe 2 with a chalcopyrite structure
2012; American Institute of Physics; Volume: 100; Issue: 4 Linguagem: Inglês
10.1063/1.3678044
ISSN1520-8842
AutoresAtsuko Kosuga, Theerayuth Plirdpring, Ryosuke Higashine, Mie Matsuzawa, Ken Kurosaki, Shinşuke Yamanaka,
Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoWe investigated the high-temperature thermoelectric properties of Cu1–xInTe2 (x = 0, 0.05, 0.1, 0.2) at 310–710 K. The electrical properties of this system were optimized by the presence of substoichiometric amounts of copper and additional phonon scattering by lattice defects and a secondary phase reduced the thermal conductivity of the system. The samples of Cu1–xInTe2 (x = 0, 0.05, 0.1, 0.2) all had dimensionless figures of merit in excess of 0.5 at 710 K with a maximum value of 0.54 for x = 0.1.
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