Thermally stimulated luminescence of Ce and Tb doped SiO2 sol–gel glasses
2005; Elsevier BV; Volume: 351; Issue: 49-51 Linguagem: Inglês
10.1016/j.jnoncrysol.2005.10.001
ISSN1873-4812
AutoresA. Vedda, N. Chiodini, Daniela Di Martino, Mauro Fasoli, L. Griguta, Federico Moretti, E. Rosetta,
Tópico(s)Mineralogy and Gemology Studies
ResumoThermally stimulated luminescence (TSL) properties of cerium and terbium doped SiO2 sol–gel glasses were studied after X-ray irradiation in the temperature range 10–700 K. The role of Ce3+ and Tb3+ as recombination centers was shown. The existence of a distribution of trap levels was observed; the activation energies of such a distribution were calculated to extend from about 8 × 10−3 eV up to 1.8 eV for both cerium and terbium doped sol–gel glasses. The effect of a post-densification thermal treatment on TSL properties was also analyzed.
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