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Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

2014; American Institute of Physics; Volume: 104; Issue: 2 Linguagem: Inglês

10.1063/1.4861890

1520-8842

Kaoru Toko, Ryohei Numata, Oya N, Naoki Fukata, Noritaka Usami, Takashi Suemasu,

Silicon Nanostructures and Photoluminescence

The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180 °C. We accelerated the AIC of an amorphous Ge layer (50-nm thickness) by initially doping Ge in Al and by facilitating Ge diffusion into Al. The electron backscatter diffraction measurement demonstrated the simultaneous achievement of large grains over 10 μm and a high (111) orientation fraction of 90% in the polycrystalline Ge layer formed at 180 °C. This result opens up the possibility for developing Ge-based electronic and optical devices fabricated on inexpensive flexible substrates.