Dynamic back bias CMOS driver for low-voltage applications
2000; Institution of Engineering and Technology; Volume: 36; Issue: 2 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresY. Moisiadis, I. Bouras, A. Arapoyanni,
Tópico(s)Electrostatic Discharge in Electronics
ResumoA high performance CMOS driver scheme for low-voltage applications is proposed. The threshold voltage of the MOS devices is electrically controlled in order to achieve high-speed operation during the transitions without increasing the static power dissipation. The VTH control scheme has been applied to the pull-up section of the driver and simulations at 0.9 V and at 50 MHz have shown that the proposed driver exhibits a speed advantage of 40% during pull-up transitions over a conventional CMOS driver, without leading to a serious increase in the power dissipation.
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