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Study of High-κ/In 0.53 Ga 0.47 As Interface by Hard X-ray Photoemission Spectroscopy

2011; Institute of Physics; Volume: 50; Issue: 10S Linguagem: Inglês

10.1143/jjap.50.10pd02

1347-4065

Koji Yamashita, Yuuya Numajiri, M. Watanabe, Kuniyuki Kakushima, Hiroshi Iwai, Hiroshi Nohira,

Ga2O3 and related materials

We have investigated the effect of La 2 O 3 interlayer insertion on the thermal stability of a high-κ/In 0.53 Ga 0.47 As interface and the chemical bonding states at the high-κ/In 0.53 Ga 0.47 As interface by hard X-ray ( h ν= 7.94 keV) photoemission spectroscopy (HX-PES). The control of the oxide formation at the HfO 2 /In 0.53 Ga 0.47 As interface was tried by inserting La 2 O 3 , which has a large Gibbs free energy. Analyses of As 2p, Ga 2p, In 3d, Hf 3d, La 3d, and W 4f spectra show that the oxidation of In 0.53 Ga 0.47 As was suppressed by La 2 O 3 interlayer insertion. We have also investigated the effect of surface treatment on the chemical bonding state of the In 0.53 Ga 0.47 As surface. (NH 4 ) 2 S treatment can suppress the oxidation of the In 0.53 Ga 0.47 As surface.