Narrowband detection at long wavelengths with epitaxial Pb y Sn1− y Se films
1977; American Institute of Physics; Volume: 31; Issue: 8 Linguagem: Inglês
10.1063/1.89768
ISSN1520-8842
Autores Tópico(s)Photonic and Optical Devices
ResumoNarrowband photovoltaic detectors were prepared using two PbySn1−ySe epitaxial layers of slightly different alloy compositions grown on BaF2 substrates. Using Pb to form Schottky barrier detectors has yielded devices with D*λ (10.6 μm) =7.0×1010 cm Hz1/2 W−1 and spectral half-bandwidths of 6000 Å. These devices are insensitive to variations in incident angle due to the large refractive indices of PbySn1−ySe.
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