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Recent Progress of Pixel Detector R&D based on SOI Technology

2012; Elsevier BV; Volume: 37; Linguagem: Inglês

10.1016/j.phpro.2012.02.450

1875-3892

T. Miyoshi, Y. Arai, Y. Fujita, K. Hara, R. Ichimiya, Yoichi Ikegami, Y. Ikemoto, Hiroki Kasai, Hironori Katsurayama, Takashi Kohriki, Masao Okihara, Yoshimasa A. Ono, Yoshiyuki Onuki, K. Shinsho, Ayaki Takeda, K. Tauchi, T. Tsuboyama, Y. Unno,

Advanced Semiconductor Detectors and Materials

We are developing truly monolithic pixel detectors with a 0.2 μm silicon-on-insulator (SOI) CMOS technology, which is intended to be utilized in various research fields, such as high-energy physics, X-ray material analysis, astrophysics and medical sciences. In the development project, KEK has organized several Multi Project Wafer (MPW) runs and the process has been incrementally improved. Czochralski (CZ-) and Float-Zone (FZ-) silicon has been used as a starting material for the detector fabrication. Using FZ-SOI wafers, the detectors worked at full depletion below the breakdown voltage. The up-to-date integration-type pixel detector with 14 μm pixel size has excellent spatial resolution.