Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's
1986; Institute of Electrical and Electronics Engineers; Volume: 33; Issue: 3 Linguagem: Inglês
10.1109/t-ed.1986.22502
ISSN1557-9646
AutoresMong-Song Liang, Jeong Yeol Choi, Ping-Keung Ko, Chenming Hu,
Tópico(s)Semiconductor materials and interfaces
ResumoInversion-layer capacitance has been experimentally characterized and identified to be the main cause of the second-order thickness-dependence of MOSFET characteristics. Field-dependent channel mobilities of both electrons and holes were independent of gate-oxide thicknesses from 50 to 450 Å, e.g., there is no evidence of the alleged mobility degradation in very thin gate-oxide MOSFET's. Subthreshold slope, insignificantly affected by the inversion-layer capacitance, follows the simple theory down to ∼ 35 Å of oxide thickness. The empirical equations for inversion-layer Capacitance and mobilities versus electric field are proposed.
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