Formation of Tensilely Strained Germanium-on-Insulator
2011; Institute of Physics; Volume: 5; Issue: 1 Linguagem: Inglês
10.1143/apex.5.015701
ISSN1882-0786
AutoresYusuke Hoshi, Kentarou Sawano, Kohei Hamaya, Masanobu Miyao, Y. Shiraki,
Tópico(s)Semiconductor materials and devices
ResumoWe fabricate a high-quality germanium-on-insulator (GOI) with tensile strain by combining the wafer bonding of a strained Ge grown on a Si substrate and an oxidized Si substrate and the selective etching of Si. The obtained 300-nm-thick strained GOI shows a smooth surface with RMS roughness of 0.15 nm and no dislocation is detected by cross-sectional transmission electron microscopy (XTEM). The tensile strain of 0.19% induced in the GOI is found to be maintained throughout the fabrication process. This suggests that the fabricated strained GOI has a high potential as an essential platform for high-performance electronic and optical devices.
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