Artigo Revisado por pares

Rapid synthesis of gallium nitride powder

2005; Elsevier BV; Volume: 279; Issue: 3-4 Linguagem: Inglês

10.1016/j.jcrysgro.2005.02.040

ISSN

1873-5002

Autores

Huaqiang Wu, Janet L. Hunting, Kyota Uheda, Lori A. Lepak, Phanikumar Konkapaka, Francis J. DiSalvo, Michael G. Spencer,

Tópico(s)

Semiconductor materials and devices

Resumo

The synthesis of high purity, single-phase gallium nitride (GaN) powder has been achieved through the reaction between molten Ga and ammonia (NH3) using Bi as a catalyst. In this simple apparatus, 25 g Ga can be fully, stoichiometrically converted into GaN within 5 h. The optimum temperature, NH3 flow rate and reaction time in this hot wall tube furnace were 1000 °C, 500 standard cubic centimeters per minute (sccm) and 5 h, respectively. The synthesized powder was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), glow discharge mass spectrometry (GDMS), Raman spectroscopy, and cathodoluminescence (CL). All of these techniques indicated high purity, hexagonal polycrystalline GaN with 1–20 μm across plate like grains.

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