Rapid synthesis of gallium nitride powder
2005; Elsevier BV; Volume: 279; Issue: 3-4 Linguagem: Inglês
10.1016/j.jcrysgro.2005.02.040
ISSN1873-5002
AutoresHuaqiang Wu, Janet L. Hunting, Kyota Uheda, Lori A. Lepak, Phanikumar Konkapaka, Francis J. DiSalvo, Michael G. Spencer,
Tópico(s)Semiconductor materials and devices
ResumoThe synthesis of high purity, single-phase gallium nitride (GaN) powder has been achieved through the reaction between molten Ga and ammonia (NH3) using Bi as a catalyst. In this simple apparatus, 25 g Ga can be fully, stoichiometrically converted into GaN within 5 h. The optimum temperature, NH3 flow rate and reaction time in this hot wall tube furnace were 1000 °C, 500 standard cubic centimeters per minute (sccm) and 5 h, respectively. The synthesized powder was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), glow discharge mass spectrometry (GDMS), Raman spectroscopy, and cathodoluminescence (CL). All of these techniques indicated high purity, hexagonal polycrystalline GaN with 1–20 μm across plate like grains.
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