Heteroepitaxy of AlN on α-Al2O3 by electron cyclotron resonance plasma-assisted chemical vapor deposition at low temperatures
1993; Elsevier BV; Volume: 132; Issue: 1-2 Linguagem: Inglês
10.1016/0022-0248(93)90279-6
ISSN1873-5002
AutoresWei Zhang, Yoshihiro Someno, M. Sasaki, Toshio Hirai,
Tópico(s)Metal and Thin Film Mechanics
ResumoEpitaxial growth of AlN films was achieved on α-Al2O3(012) single crystal substrates by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using AlBr3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 630°C. The (102)-oriented epitaxial AlN films were, for the first time, successfully grown on α-Al2O3(012) substrates, and they consist of two types of crystallite whose in-plane orientations are AlN[1210]‖α-Al2O3[2201] and AlN[1210]‖α-Al2O3[2021], respectively.
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