Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor
1986; American Institute of Physics; Volume: 49; Issue: 19 Linguagem: Inglês
10.1063/1.97380
ISSN1520-8842
AutoresJ.F. Palmier, C. Minot, J.L. Lievin, F. Alexandre, Jean‐Christophe Harmand, J. Dangla, C. Dubon‐Chevallier, D. Ankri,
Tópico(s)Quantum and electron transport phenomena
ResumoWe report the first operating bipolar transistor built with an AlGaAs/GaAs superlattice base. High current gain is measured with a suitable design of the bipolar transistor structure. Experimental results are in good agreement with a Bloch to hopping transition which is very sensitive to the AlGaAs barrier thickness. This interpretation is supported by a detailed numerical simulation reproducing the static Ic(Vce,Ib) transistor transfer data.
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