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Epitaxial Growth of Aluminum on Silicon Substrates by Metalorganic Molecular Beam Epitaxy using Dimethyl-Ethylamine Alane

1998; Institute of Physics; Volume: 37; Issue: 5R Linguagem: Inglês

10.1143/jjap.37.2602

1347-4065

Yoichiro Neo, Toshihiro Otoda, Katumi Sagae, Hidenori Mimura, K. Yokoo,

Semiconductor materials and devices

In this paper, the growth process of aluminum on a silicon substrate by metalorganic molecular beam epitaxy using dimethyl-ethylamine alane has been described. The crystallographic orientation of the aluminum grains strongly depends on the substrate temperature. The epitaxial single crystalline (111) Al grains grow on a (111) Si substrate at a substrate temperature between 450 and 500°C. The bi-crystalline (110) Al grains grow on a (100) Si substrate at the substrate temperature between 350 and 450°C. For a (100) Si substrate, the orientation of Al is related to the reconstruction of the Si substrate. Furthermore, the selective growth of Al into 1.5-µm-diameter via-holes is shown to be possible.