Electrical Resistivity Anisotropy of Silicon-Doped n-Indium Selenide
1993; Wiley; Volume: 136; Issue: 1 Linguagem: Inglês
10.1002/pssa.2211360145
ISSN1521-396X
AutoresJaime Riera, A. Segura, A. Chévy,
Tópico(s)Quantum Dots Synthesis And Properties
Resumophysica status solidi (a)Volume 136, Issue 1 p. K47-K50 Short Note Electrical Resistivity Anisotropy of Silicon-Doped n-Indium Selenide J. Riera, J. Riera Departamento de Fisica Aplicada, Universidad Politécnica de Valencia Search for more papers by this authorA. Segura, A. Segura Departamento de Fisica Aplicada, Facultad de Fisica, Universidad de Valencia Search for more papers by this authorA. Chevy, A. Chevy Laboratoire de Physique des Milieux Condensés, Université de Paris VI Search for more papers by this author J. Riera, J. Riera Departamento de Fisica Aplicada, Universidad Politécnica de Valencia Search for more papers by this authorA. Segura, A. Segura Departamento de Fisica Aplicada, Facultad de Fisica, Universidad de Valencia Search for more papers by this authorA. Chevy, A. Chevy Laboratoire de Physique des Milieux Condensés, Université de Paris VI Search for more papers by this author First published: 16 March 1993 https://doi.org/10.1002/pssa.2211360145Citations: 10 Camino de Vera, E-46071 Valencia, Spain. E-46100 Burjassot (Valencia), Spain. 4 place Jussieu, Tour 13, 4ème etage, F-75005 Paris, France. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume136, Issue116 March 1993Pages K47-K50 RelatedInformation
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