Produção Nacional
Electron correlations in semiconductor heterostructures
1987; American Physical Society; Volume: 36; Issue: 12 Linguagem: Inglês
10.1103/physrevb.36.6677
ISSN1095-3795
AutoresUmbelino de Freitas, Nélson Studart,
Tópico(s)Advanced Chemical Physics Studies
ResumoThe theory of a two-dimensional electron gas is reexamined in the case of GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As heterojunctions and quantum wells. A new and accurate method was employed to calculate the static structure factor within the mean-field approximation. The influence of the finite width of the electron layer was investigated by calculation of the plasmon dispersion, the local-field function, and exchange and correlation energies in the random-phase approximation (RPA), the Hubbard approximation, and the self-consistent Singwi-Tosi-Land-Sj\"olander approximation.
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