Portal de Periódicos da CAPES

The mechanism of atomic layer epitaxy of GaAs using trimethylgallium and arsine

1990; Elsevier BV; Volume: 41; Issue: 4-6 Linguagem: Inglês

10.1016/0042-207x(90)93835-7

1879-2715

A. Watanabe, T. Kamijoh, M. Hata, Toshiro Isu, Yoshifumi Katayama,

Semiconductor materials and devices

Abstract The mechanism of atomic layer epitaxy by metalorganic molecular beam epitaxy is studied by in situ observation of reflection high energy electron diffraction (RHEED). The growth rate of GaAs is measured for the various supply sequences using trimethylgallium (TMGa), triethylgallium (TEGa) and Ga metal as a Ga source. It was found that TMGa and TEGa molecules do not decompose to Ga atoms, and that the TMGa in excess of 1 ML on the GaAs substrate is desorbed immediately after TMGa supply is stopped. Therefore, it is considered that self-limiting monolayer growth is a results of the re-evaporation of the excess TMGa adsorbed on the substrate.