Wafer-scale silicon nanopillars and nanocones by Langmuir–Blodgett assembly and etching
2008; American Institute of Physics; Volume: 93; Issue: 13 Linguagem: Inglês
10.1063/1.2988893
ISSN1520-8842
AutoresChing-Mei Hsu, Stephen T. Connor, Mary X. Tang, Yi Cui,
Tópico(s)Force Microscopy Techniques and Applications
ResumoWe have developed a method combining Langmuir–Blodgett assembly and reactive ion etching to fabricate nanopillars with uniform coverage over an entire 4 inch wafer. We demonstrated precise control over the diameter and separation between the nanopillars ranging from 60 to 600 nm. We can also change the shape of the pillars from having vertical to tapered sidewalls with sharp tips exhibiting a radius of curvature of 5 nm. This method opens up many possible opportunities in nanoimprinting, solar cells, batteries, and scanning probes.
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