Growth of adhesive c-BN films on a tensile BN buffer layer
2000; Elsevier BV; Volume: 9; Issue: 3-6 Linguagem: Inglês
10.1016/s0925-9635(00)00215-6
ISSN1879-0062
AutoresYoke Khin Yap, Toshihiro Aoyama, Yasaku Wada, Masashi Yoshimura, Yusuke Mori, T. Sasaki,
Tópico(s)Boron and Carbon Nanomaterials Research
ResumoCubic phase boron nitride (c-BN) film grown on intrinsic BN interlayer has been found to peel off near the interface. The strain force induced by the compressive c-BN film is suggested to extend the lattice spacing between the h-BN/t-BN (0002) planes, increase the lattice mismatch between BN phases and lead to the peeling of c-BN. Based on this concept, a new BN buffer layer enhancing c-BN adhesion has been grown. This buffer is almost stoichiometric in composition, tensile in stress and contains hexagonal planes that are not properly aligned normal to the substrate surface. An improvement in c-BN adhesion was related to such a disordered microstructure, which contains covalent BN bonds in the direction parallel to the substrate surface. Such bonding is important to sustain the strain force that occurs near the boundary of the c-BN and BN interlayer, maintain lattice matching and thus improve c-BN film adhesion. Tensile stress of the buffer layer is also thought to compensate for the compressive stress of c-BN films and to help improve the adhesion.
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