Growth of highly strained InAs/InP heterostructures by metalorganic chemical vapor deposition using tertiarybutylarsine
1992; American Institute of Physics; Volume: 60; Issue: 5 Linguagem: Inglês
10.1063/1.106590
ISSN1520-8842
AutoresC. A. Tran, R. A. Masut, P. Cova, J. L. Brebner,
Tópico(s)Quantum Dots Synthesis And Properties
ResumoInAs/InP highly strained quantum well, multiquantum well, and superlattice structures with abrupt interfaces have been grown using tertiarybutylarsine. The diffraction of x-ray wave fields in these heterostructures has been used to examine the structural properties of quantum wells with a thickness of a few monolayers. The high resolution five-crystal x-ray diffraction patterns of single and multiple quantum wells exhibit a modulation of the interferences fringes which strongly depends on the structural parameters of these layers. A computer simulation of the x-ray experimental Bragg diffraction pattern using dynamical theory shows good agreement between the measured and simulated spectra.
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