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Irradiation Effects of 60 Co γ-Ray on the near Band-Edge Photoluminescence (PL) of ZnSe

1988; Institute of Physics; Volume: 27; Issue: 9R Linguagem: Inglês

10.1143/jjap.27.1669

1347-4065

Katsumi Mochizuki, Katashi Masumoto,

Chalcogenide Semiconductor Thin Films

Near band-edge photoluminescence (PL) in ZnSe single crystals irradiated with 60 Co γ-ray of various dosages was examined at 4.2 K. The emission intensity of the so-called I 1 D (445.3 nm) and Y 0 (476.0 nm) lines increases obviously with increasing dosage and decreases after anneling. It is concluded that these emission lines are closely related to the native lattice defects, which are probably a zinc vacancy ( V Zn ) for the I 1 D line and a dislocation for the Y 0 line.