Field-induced resistive switching based on space-charge-limited current
2007; American Institute of Physics; Volume: 90; Issue: 2 Linguagem: Inglês
10.1063/1.2430912
ISSN1520-8842
AutoresYidong Xia, Weiye He, Liang Chen, Xiangkang Meng, Zhiguo Liu,
Tópico(s)Ferroelectric and Piezoelectric Materials
ResumoPolycrystalline (Ba,Sr)(Zr,Ti)O3 thin films sandwiched between two Pt electrodes have been revealed to exhibit hysteretic current-voltage (I-V) characteristics and resistive switching at room temperature. High- and low-resistance states, as well as a less abrupt state transition, occur during the voltage cycle. The maximum ratio between these two resistance states is about 230. Analyses of I-V behaviors have been executed, and it is proposed that space-charge-limited-current conduction in higher voltage region caused by asymmetric electron trapping centers is responsible for such transition of resistance states.
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